[1] Yanjun Han, Song Xue, Wenping Guo, Changzheng Sun,Zhibiao Hao and Yi Luo, “Characteristics of n-GaN after Cl2/Ar and Cl2/N2 inductively coupled plasma etching”, Jpn. J. Appl. Phys. Part 1, vol. 42, No. 10. pp. 6409-6412, 2003.
[2] Yanjun Han, Song Xue, Wenping Guo, Yi Luo, Zhibiao Hao and Changzheng Sun, “Highly selective dry etching of GaN over AlGaN using inductively coupled Cl2/N2/O2 plasmas”, Jpn. J. Appl. Phys. Part 2, vol. 42, No. 10A, pp. 1139-1141, 2003.
[3] Yanjun Han, Song Xue, Tong Wu, Zhen Wu, Wenping Guo, Yi Luo, Zhibiao Hao and Changzheng Sun, “Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas,” J. Vac. Sci. Technol., vol. A22, No. 2, pp. 407-412, 2004.
[4] Yanjun Han, Song Xue, Tong Wu, Zhen Wu, Wenping Guo, Yi Luo, Zhibiao Hao, and Changzheng Sun, “Nonselective etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductive coupled plasmas,” Science in China, Series E, pp. 150-158, 2004.
[5] Yi Luo, Zexin Feng, Yanjun Han, Hongtao Li, “Design of compact and smooth free-form optical system with uniform illuminance for LED source”, Optics Express, Vol 18, No.9, pp9055-9063, 2010
[6] Yi Luo, Zexin Feng, Yanjun Han, Hongtao Li, “Design of compact and smooth free-form optical system with uniform illuminance for LED source”, Optics Express, Vol 18, No.9, pp9055-9063, 2010
[6] K. Wang, Y. J. Han, H. Li, and Y. Luo, Overlapping-based optical freeform surface construction for extended lighting source, Optics express, 21(17) (2013), 19750-19761.
[7] X. L. Mao, H. T. Li, Y. J. Han, and Y. Luo, Two-step design method for highly compact three-dimensional freeform optical system for LED surface light source, Optics Express, 22(106) (2014), A1491-A1506.

Hi-tech Research and Development Program of China (National 863 Project), “Industry key technologies on epitaxy growth of GaN-based materirals and LEDs fabrication,” Jan. 2001-Dec. 2004, Principle Investigator.
The objective of the project is to obtain high-brightness blue/green light emitting diodes for the application of information display, big screen full-color display panal, semiconductor lighting and so on.

Hi-tech Research and Development Program of China (National 863 Project), “High efficiency GaN-based material epitaxy,” October. 2006-Sept.2008, Principle Investigator.
The objective of the project is to clarify the main factors that affect the internal quantum efficiency of the light emiting diodes (LEDs) and provide some methods to enhance the whole performance of the LEDs.

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