Hi-tech Research and Development Program of China (National 863 Project), “Industry key technologies on epitaxy growth of GaN-based materirals and LEDs fabrication,” Jan. 2001-Dec. 2004, Principle Investigator.
The objective of the project is to obtain high-brightness blue/green light emitting diodes for the application of information display, big screen full-color display panal, semiconductor lighting and so on.

Hi-tech Research and Development Program of China (National 863 Project), “High efficiency GaN-based material epitaxy,” October. 2006-Sept.2008, Principle Investigator.
The objective of the project is to clarify the main factors that affect the internal quantum efficiency of the light emiting diodes (LEDs) and provide some methods to enhance the whole performance of the LEDs.