清华大学 Wenhua Chen--Home-- G. Lv, W. Chen, X. Chen, S. Wan, F. M. Ghannouchi and Z. Feng, "A Fully Integrated 3.5-/4.9-GHz Dual-Band GaN MMIC Doherty Power Amplifier Based on Multi-Resonant Circuits," in IEEE Transactions on Microwave Theory and Techniques, 2021.

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Selected Publications

Release time: 2021-11-02Hits:

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Pre One:X. Li et al., "A High-Efficiency 142-182-GHz SiGe BiCMOS Power Amplifier With Broadband Slotline-Based Power Combining Technique," in IEEE Journal of Solid-State Circuits，2021.
Next One:X. Li et al., "A 250-310 GHz Power Amplifier with 15-dB Peak Gain in 130-nm SiGe BiCMOS Process for Terahertz Wireless System," in IEEE Transactions on Terahertz Science and Technology, 2021.

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Doctoral degree

Wenhua Chen

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